300 mm BEOL large field exposure system, fully automated (IZM-132) - PR1184859-3460-P

Description du marché

1 piece: 300 mm BEOL large field exposure system, fully automated (IZM-132) 300mm wide field i-line exposure system to form the link between FEOL lithography and backend lithography targeting sub-µm ultra-high density BEOL like wiring and interconnect formation on front- and backside for 2.5D/3D QMI and chiplet integration. With the equipment, ultra-high BEOL like wiring can be realized on large-area chiplet-based 2.5D/3D wafer-level systems and quasi-monolithic integrated package architectures. It enables leading-edge integration densities. The large field i-line exposure systems forms the link between FEOL lithography and backend lithography through a mid-NA optics with the largest possible field size and with variable depth of focus. It is targeting resolutions significantly smaller than <800nm L/S to paves the way towards resolutions down to 500 nm L/S with overlay accuracy <100nm. It has the ability of front and back alignment to realize 3D systems, control of the exposure focus as well as a variable depth of focus for thick resist application in the area of re-distribution wiring and µ-interconnects. Optional features: - Extreme deformation and deflection range >1500-2500 µm (LV-Pos.1.24) IR-based alignment on the rear side (reflection mode) with an overlap of ≤500 nm (3 sigma), essential for through-silicon vias (TSVs) and stacked wafer applications (LV-Pos.1.81) - Pre-alignment correction of centre and rotational errors caused by shifts in alignment marks on stacked wafers (Si/Si) and (glass/Si) to compensate for shifts during wafer bonding, enabling alignment within the required field of view of the exposure tool (please explain solution) (Specification Item 1.85) - Unique pattern-based recognition system (either diffraction-based or image-based) to enable flexible alignment marks for alignment (may be Cognex pattern recognition or similar) (Specification Item 1.87) - Integration scheme / option for coarse and fine alignment (e.g. coarse alignment using pattern recognition to compensate for displacements during wafer bonding, fine alignment using a diffraction-based alignment mark) (Specification Item 1.88) - Search for coarse alignment marks within the field of view (e.g. FoV 1500 x 1200 µm) to allow a search range of several millimetres; correction using a pre-alignment stage may also be an option --> please explain the solution (Specification Item 1.89)

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