Fully Automated Wafer Electro Chemical Metal Plating Tool (IZM-140) - PR1163163-3460-P

Description du marché

1 System: Fully Automated Wafer Electro Chemical Metal Plating Tool (IZM-140) The following equipment specification defines a fully automated tool for electro chemical deposition (ECD) of different metal layers on wafer substrates. The focus is on high aspect ratio bumps, redistribution layers (RDL) and copper filling of high aspect ratio trough silicon via (TSV). Wafer substrates are made of Silicon and/or glass, come with diameters of 200 and 300mm and thicknesses up to 2mm. Prior to the process, the wafers are delivered to the tool in front opening unified pods (FOUPs), which are manually placed on the respective load ports by the operator. The new tool must be able to fully automatically run the following series of steps: • Unloading designated wafers from the FOUP • Running wet processes • Unloading wafers back to origin position into FOUP The programming of recipes must be possible within an appropriate range of options and parameters as required for research and development (R&D). The system to be procured with new ECD chamber generation for galvanic processes enables flexible metal deposition of high-aspect ratio pillars, TSV (full fill / liner), damascene RDL / vias (e.g. for hybrid bonding), as well as high density RDLs with line / space distances of < 1µm for 300mm BEOL processes, whereby the handling allows the processing of thinned and bonded wafers and glass wafers (2.5D/3D systems) with high warpage and bow. The tool must enable the electroplating and filling of higher aspect ratios and larger volumes. The interconnect metals required for this new applications are Cu, Ni, SnAg, Au and optional In. Optional features: - Thinned wafer thickness range of 200 and 300 mm (Si or glass): 300 ... 600 µm (LV item 1.19.) - Machine is prepared for wafer flip (LV item 1.33.) - Robot with edge gripper end effector (LV item 1.34.) - Chemical pre-cleaning and pre-moistening with deionized water for resist patterns (LV item 2.21.) - Inline inspection and cleaning of sealed ring contacts (LV item 2.22.) - Indium pattern electroplating (LV item 2.28.) - Single wafer spray process (LV item 2.31.) - 2 x tanks with a capacity of at least 10 liters each for various pre-cleaning chemicals (LV item 2.32.) - Recovery mode (LV item 2.33.) - Overflow protection (LV item 2.34.) - DI water purification (LV item 2.35.) - N2 drying (LV item 2.36.) - Single wafer (LV item 2.82.) - Tank volume of approx. 50 liters for electrolyte (LV item 2.83) - N2 flushing (LV item 2.84) - Tank heating/cooling 20 °C to 60 °C / +-2 °C (LV item 2.85) - Overflow protection for tank and chamber (LV item 2.86.) - Inline filter housing (LV item 2.87.) - DC power supply / stepwise adjustable ampere resolution / up to 50 amperes (LV item 2.88.) - Service life of contact ring > 20,000 wafers / 2 mm seal position / see appendix (LV item 2.89.) - DI water flushing (LV item 2.90) - Inert anodes (LV item 2.91) - Edge bead removal adjustable in a range from 2 mm to 5 mm (LV item 2.108)

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